[D66] High-NA EUV lithography: current status and outlook for the future

[René Oudeweg]

High-NA EUV lithography: current status and
outlook for the future
To cite this article: Harry J. Levinson 2022
Jpn. J. Appl. Phys. 61 SD0803
View th

High-NA extreme ultraviolet (EUV) lithography is currently in 
development. Fabrication of exposure tools and optics with a numerical 
aperture (NA) equal to 0.55 has started at ASML and Carl Zeiss. Lenses 
with such high NA will have very small depths-of-focus, which will 
require improved focus systems and significant improvements in wafer 
flatness during processing. Lenses are anamorphic to address mask 3D 
issues, which results in wafer field sizes of 26 mm × 16.5 mm, half that 
of lower NA EUV tools and optical scanners. Production of large die will 
require stitching. Computational infrastructure is being created to 
support high-NA lithography, including simulators that use Tatian 
polynomials to characterize the aberrations of lenses with central 
obscurations. High resolution resists that meet the line-edge roughness 
and defect requirements for high-volume manufacturing also need to be 
developed. High power light sources will also be needed to limit photon 
shot noise.
© 2022 The Japan Society of Applied Physic


https://iopscience.iop.org/article/10.35848/1347-4065/ac49fa/pdf